收藏本站
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
1000
LOW VOLTAGE OUTPUT
CHARACTERISTICS
20
V BS = 0V
T A = 25 ° C
V GS = 12V
10V
500
V BS = 0V
T A = 25 ° C
V GS = 12V
6V
15
10
5
8V
6V
4V
0
-500
4V
2V
2V
0
-1000
0
2
4
6
8
10
12
-160
-80
0
80
160
20
DRAIN SOURCE VOLTAGE (V)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
20
DRAIN SOURCE VOLTAGE (mV)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
10
V BS = 0V
f = 1KHz
I DS = 10mA
15
V GS = V DS
T A = 25 ° C
5
T A = +125 ° C
T A = +25 ° C
V BS = 0V
-2V
-4V
2
1
10
-6V
-8V
-10V
0.5
5
-12V
0.2
I DS = 1mA
0
0
2
4
6
8
10
12
0
0.8
1.6
2.4
3.2
4.0
100
10
1
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R DS (ON) vs. GATE SOURCE VOLTAGE
V DS = 0.2V
V BS = 0V
T A = +125 ° C
1000
100
10
GATE SOURCE VOLTAGE (V)
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
V DS = +12V
V GS = V BS = 0V
0.1
T A = +25 ° C
1
0
2
4
6
8
10
12
-50
-25
0
+25
+50
+75
+100 +125
GATE SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE ( ° C)
ALD1106/ALD1116
Advanced Linear Devices
3 of 11
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ALD1107SBL MOSFET 4P-CH 13.2V QUAD 14SOIC
ALD110800ASCL MOSFET N-CH 10.6V QUAD 16SOIC
ALD110802PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110804PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110808PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110814PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD1108EPCL MOSFET N-CH ADJ QUAD 16PDIP
ALD1115MAL MOSFET N/P-CH 13.2V 8MSOP
相关代理商/技术参数
ALD1107 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
ALD1107_12 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
ALD1107DB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
ALD1107PB 功能描述:MOSFET Quad P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1107PBL 功能描述:MOSFET Quad P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1107SB 功能描述:MOSFET Quad P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1107SBL 功能描述:MOSFET Quad P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD110800 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:Advanced Liner Devices.Inc QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSFET ARRAY